MGFS36E3436A Datasheet, Mitsubishi Electric Semiconductor

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* InGaP HBT Device 6V Operation 30dB Linear Gain 2.5% EVM at an Output power of 25dBm 4% EVM at an Output power .

IEEE802.16-2004, IEEE802.16e-2005 1 2 3 4 5 (X-ray Top View) 1 2 3 4 5 6 7 8 9 10 Pin Vc (Vcb) Vc (Vc1) Vc (Vc2) Vc (V.

MGFS36E3436A is a GaAs RF amplifier designed for WiMAX CPE. 4.5 1.0 FEATURES
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* InGaP HBT Device 6V Operation 30dB Linear Gain 2.5% EVM at an Output power of 25dBm 4% EVM at an Output power of.